Seed layers for metallic interconnects

Details Seed layers for metallic interconnects Seed layers for metallic interconnects

2007-04-03

2007-04-03

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000

Reexamination Certificate

active

11057485

ABSTRACT:
One embodiment of the present invention is a method for making copper or a copper alloy interconnects, which method includes: (a) forming a patterned insulating layer over a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening; (b) depositing a barrier layer over the patterned insulating layer including over the field and inside surfaces of the at least one opening, the barrier layer consists of a refractory metal or an alloy of a refractory metal; (c) physical vapor depositing a substantially non-conformal seed layer consisting of copper or a copper alloy over the barrier layer, wherein said substantially non-conformal seed layer is thicker than about 500 Å over the field; (d) chemical vapor depositing a substantially conformal seed layer consisting of copper or a copper alloy over the substantially non-conformal seed layer; and (e) filling the at least one opening by electroplating a metallic layer consisting of copper or a copper alloy over the substantially conformal seed layer.

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