Sectional field effect devices and method of fabrication

Details Sectional field effect devices and method of fabrication Sectional field effect devices and method of fabrication

2008-06-20

2010-02-09

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C438S283000, C257SE29275, C257SE21562

Reexamination Certificate

active

07659153

ABSTRACT:
A field effect device is disclosed which has a body formed of a crystalline semiconductor material and has at least one vertically oriented section and at least one horizontally oriented section. The device is produced in SOI technology by fabricating first a formation of the device in masking insulators, and then transferring this formation through several etching steps into the SOI layer. The segmented field effect device combines FinFET, or fully depleted silicon-on-insulator FETs, type devices with fully depleted planar devices. This combination allows device width control with FinFET type devices. The segmented field effect device gives high current drive for a given layout area. The segmented field effect devices allow for the fabrication of high performance processors.

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