Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-17
2008-08-12
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S499000, C257SE21626
Reexamination Certificate
active
07410872
ABSTRACT:
A method for sealing electronic devices formed on a semiconductor substrate includes forming a plurality of first electronic devices adjacent a first portion of the semiconductor substrate, with each first electronic device including a first region comprising at least one first conductive layer projecting from the semiconductor substrate. A first sealing layer is formed adjacent the first regions for sealing the plurality of first electronic devices. A protective layer is formed adjacent the first sealing layer. The protective layer is etched to form protective spacers adjacent sidewalls of the first regions. The method further includes forming a plurality of second electronic devices adjacent a second portion of the semiconductor substrate, with each second electronic device including a second region comprising a second conductive layer projecting from the semiconductor substrate. A second sealing layer is formed adjacent the second regions for sealing the plurality of second electronic devices, and adjacent the first sealing layer for sealing the plurality of first electronic devices.
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Patent Abstracts of Japan, vol. 1996, No. 10, Oct. 31, 1996 & JP 08 153860 A, Mitsubishi Electric Corp., Jun. 11, 1996.
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Malsawma Lex
STMicroelectronics S.r.l.
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