Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-18
2006-07-18
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07078294
ABSTRACT:
A method for sealing electronic devices formed on a semiconductor substrate includes forming at least one first conductive layer on a first portion of the semiconductor substrate for defining electronic devices, and forming a second conductive layer on a second portion of semiconductor substrate for also defining electronic devices. First regions are formed in the at least one first conductive layer for defining electronic devices, and a first sealing layer is formed on the whole semiconductor substrate to seal the first regions. Second regions are formed in the second conductive layer for defining electronic devices, and a second sealing layer is formed on the whole semiconductor substrate to seal the second regions.
REFERENCES:
patent: 6468867 (2002-10-01), Lai et al.
patent: 6506647 (2003-01-01), Kuroda et al.
patent: 6630378 (2003-10-01), Tanigawa
patent: 6798002 (2004-09-01), Ogle et al.
patent: 2003/0151069 (2003-08-01), Sugimae et al.
Patent Abstracts of Japan, vol. 1996, No. 10, Oct. 31, 1996 & JP 08 153860 A, Mitsubishi Electric Corp., Jun. 11, 1996.
Camerlenghi Emilio
Maurelli Alfonso
Peschiaroli Daniela
Zabberoni Paola
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Malsawma Lex H.
Smith Matthew
STMicroelectonics S.r.l.
LandOfFree
Sealing method for electronic devices formed on a common... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sealing method for electronic devices formed on a common..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sealing method for electronic devices formed on a common... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3592718