Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-19
2009-10-20
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07605073
ABSTRACT:
Embodiments of the invention include apparatuses and methods relating to air gap interconnect structures having interconnects protected by a sealant. In various embodiments, the sealant includes alumina or silicon nitride. In some embodiments, the interconnect structures include cobalt alloy liners and cobalt shunts to encase a conductive material.
REFERENCES:
patent: 6413852 (2002-07-01), Grill et al.
patent: 7088003 (2006-08-01), Gates et al.
patent: 7301107 (2007-11-01), Karthikeyan et al.
patent: 2008/0079172 (2008-04-01), Hsu et al.
Fajardo Arnel M.
Lavoie Adrien R.
Ramachandrarao Vijayakumar S.
Intel Corporation
Smith Bradley K
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