Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-08
2006-08-08
Clark, S. V. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S115000
Reexamination Certificate
active
07087496
ABSTRACT:
The present invention is directed to a seal structure and a method for forming a seal structure for a semiconductor die. An elongate region which is electrically isolated from the remainder of the substrate, such as a well region of a conductivity type opposite that of the substrate, extends around the major portion of the periphery of the substrate. A gap is left between the two ends of the elongate region along the minor portion of the periphery of the substrate not covered by the elongate region. A conductive seal ring is formed around the periphery of the substrate at the elongate region and spans the gap between the ends of the elongate region. The substrate of the semiconductor die is only brought into electrical contact with the seal ring at the gap between the ends of the elongate region.
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Brake Hughes PLC
Broadcom Corporation
Clark S. V.
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