Sea-of-fins structure on a semiconductor substrate and...

Details Sea-of-fins structure on a semiconductor substrate and... Sea-of-fins structure on a semiconductor substrate and...

2009-08-04

2011-12-13

Li, Meiya (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21442, C257S288000, C257S328000, C257S618000, C257S619000, C977S734000, C977S742000, C977S749000, C977S955000, C977S815000, C438S283000, C438S268000, C438S279000

Reexamination Certificate

active

08076190

ABSTRACT:
A semiconductor device and a method of fabricating a semiconductor device is disclosed, the method comprises including: forming etching an oxide layer to form a pattern of parallel oxide bars on a substrate; forming nitride spacers on side walls of the parallel oxide bars, with gaps remaining between adjacent nitride spacers; forming silicon pillars in the gaps; removing the nitride spacers to form a plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film.

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