Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2006-10-31
2006-10-31
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S619000, C257S690000, C257S762000, C438S460000
Reexamination Certificate
active
07129566
ABSTRACT:
A method of making a semiconductor device includes forming a wafer having a substrate and an interconnect structure over the substrate. The wafer also includes a plurality of die areas and a street located between a first die area of the plurality and a second die area of the plurality. A separation structure that includes metal is located in the interconnect structure. At least a portion of the separation structure is located in a saw kerf of the street. The separation structure is arranged to provide a predefined separation path for separating the first die area during a singulation process.
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Hess Kevin J.
Uehling Trent S.
Balconi-Lamica Michael J.
Chu Chris C.
Dolezal David G.
Freescale Semiconductor Inc.
Parker Kenneth
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