Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-12
2011-10-04
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S571000, C257S379000, C257S476000, C257S528000, C257SE21359, C257SE29338
Reexamination Certificate
active
08030155
ABSTRACT:
A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semiconductor region has the first conductivity type and having a second dopant concentration greater than the first dopant concentration. The method also comprises forming a conductive contact to the first semiconductor region and forming a conductive contact to the second semiconductor region. The rectifying diode comprises a current path, and the path comprises: (i) the conductive contact to the first semiconductor region; (ii) the first semiconductor region; (iii) the second semiconductor region; and (iv) the conductive contact to the second semiconductor region. The second semiconductor region does not extend to a layer buried relative to the first semiconductor region.
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Drobny Vladimir F.
Robinson Derek W.
Brady III Wade J.
Franz Warren L.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Wilczewski Mary
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