Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-13
2009-06-09
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000
Reexamination Certificate
active
07545000
ABSTRACT:
Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.
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patent: 7385264 (2008-06-01), Muraoka
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‘Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors’ Calvet et al., Journal of Applied Physics, vol. 91, No. 2, Jan. 15, 2002, pp. 757-759.
Choi Chel Jong
Jang Moon Gyu
Jun Myung Sim
Kim Yark Yeon
Lee Seong Jae
Electronics and Telecommunications Research Institute
Ladas & Parry LLP
Prenty Mark
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