Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-28
2006-02-28
Chaudhuri, Olik (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S570000, C438S581000, C438S583000, C438S585000
Reexamination Certificate
active
07005356
ABSTRACT:
A schottky barrier transistor and a method of manufacturing the same are provided. The method includes forming a gate insulating layer and a gate on a substrate, forming a spacer on a sidewall of the gate, and growing a polycrystalline silicon layer and a monocrystalline silicon layer on the gate and the substrate, respectively, using a selective silicon growth. A metal is deposited on the polycrystalline silicon layer and the monocrystalline silicon layer. Then, the metal reacts with silicon of the polycrystalline silicon layer and the monocyrstalline silicon layer to form a self-aligned metal silicide layer. Therefore, selective wet etching for removing an unreacted metal after silicidation can be omitted. Furthermore, etching damage caused during the formation of the spacer can be decreased during the growth of the monocrystalline silicon layer, thereby improving the electrical characteristics of devices.
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Cheong Woo Seok
Jang Moon Gyu
Lee Seong Jae
Blakely & Sokoloff, Taylor & Zafman
Chaudhuri Olik
Electronics and Telecommunications Research Institute
Keshavan B. V.
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