Etching a substrate: processes – Masking of a substrate using material resistant to an etchant – Mask is exposed to nonimaging radiation
Reexamination Certificate
2006-01-03
2006-01-03
Olsen, Allan (Department: 1763)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
Mask is exposed to nonimaging radiation
C216S060000, C430S030000, C700S019000, C700S030000, C700S090000, C700S121000
Reexamination Certificate
active
06982043
ABSTRACT:
Disclosed are a system and method for monitoring a patterned photoresist clad-wafer structure undergoing an etch process. The system includes a semiconductor wafer structure comprising a substrate, one or more intermediate layers overlying the substrate, and a first patterned photoresist layer overlying the intermediate layers, the semiconductor wafer structure being etched through one or more openings in the photoresist layer; a wafer-etch photoresist monitoring system programmed to obtain data relating to the photoresist layer as the etch process progresses; a pattern-specific grating aligned with the wafer structure and employed in conjunction with the monitoring system, the grating having at least one of a pitch and a critical dimension identical to the first patterned photoresist layer; and a wafer processing controller operatively connected to the monitoring system and adapted to receive data from the monitoring system in order to determine adjustments to a subsequent wafer clean process.
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Labelle Catherine B.
Lyons Christopher F.
Rangarajan Bharath
Singh Bhanwar
Subramanian Ramkumar
Advanced Micro Devices , Inc.
Amin & Turocy LLP
Olsen Allan
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