Scanning probe microscope, and semiconductor distortion sensor f

Details Scanning probe microscope, and semiconductor distortion sensor f Scanning probe microscope, and semiconductor distortion sensor f

1997-04-17

2000-04-11

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

7350415, 7351436, 250307, H01L 2982, G01P 1500, G01P 900, G01N 2300

Patent

active

060491159

ABSTRACT:
A semiconductor distortion sensor comprises a flexible cantilever having a free end portion and a fixed end portion. A p-type region and an n-type region define a pn junction formed in a preselected region of the cantilever where stress-caused distortion occurs due to flexure of the cantilever upon displacement of the free end portion of the cantilever. When the free end portion of the cantilever is subjected to displacement, the cantilever is flexed and the amount of displacement of the free end portion of the cantilever is detected on the basis of a change in an electrical characteristic of the pn junction.

REFERENCES:
patent: 4422063 (1983-12-01), Pryor
patent: 5489774 (1996-02-01), Akamine et al.
Technical Digest of the International Electron Devices Meeting (IEDM) , Wa, Dec. 10, 1995, pp. 597-600, A.P. Frierich et al., "Lateral Backward Diodes as Strain Sensors".

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