Scalable two transistor memory devices

Details Scalable two transistor memory devices Scalable two transistor memory devices

2006-05-09

2006-05-09

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Mosfet type gate sidewall insulating spacer

C257S331000, C257S903000, C257S904000, C438S240000, C438S258000, C365S063000

Reexamination Certificate

active

07042107

ABSTRACT:
A memory device includes a semiconductor substrate, a first gate insulator on a first portion of a semiconductor substrate, a storage node on the first gate insulator, a tunnel junction barrier on the storage node and a data electrode on the layer tunnel junction barrier. The device further includes a second gate insulator layer on a sidewall of the tunnel junction barrier, a third gate insulator on a second portion of the substrate adjacent the tunnel junction barrier and a gate electrode on the second gate insulator and the third gate insulator. First and second impurity-doped regions are disposed in the substrate and are coupled by a channel through the first and second portions of the substrate. Fabrication of such a device is also describes.

REFERENCES:
patent: 5952692 (1999-09-01), Nakazato et al.
patent: 6475857 (2002-11-01), Kim et al.
patent: 6528896 (2003-03-01), Song et al.
patent: 6635921 (2003-10-01), Yi et al.
patent: 2002-96809 (2002-12-01), None
patent: 2003-29203 (2003-04-01), None
Ledford, Stephen, “Non-Volatile Memory Technology Overview,” Motorola Semiconductor Application Note, Doc. No. AN1837/D, Motorola, Inc., 2000, pp. 1-17.

Affiliated with

Also associated with

Rating

Scalable two transistor memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Scalable two transistor memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scalable two transistor memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3622056