Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-22
2010-12-28
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S253000, C438S149000, C257S350000, C257S314000, C257S300000
Reexamination Certificate
active
07858472
ABSTRACT:
An integrated non-volatile memory circuit is formed by first growing a thin dielectric layer on a semiconductor substrate surface, followed by depositing a layer of conductive material such as doped polysilicon on this dielectric layer, the conductive material then being separated into rows and columns of individual floating gates. Cell source and drain diffusions in the substrate are continuously elongated across the rows. Field dielectric deposited between the rows of floating gates provides electrical isolation between the rows. Shallow trenches may be included between rows without interrupting the conductivity of the diffusions along their lengths. A deep dielectric filled trench is formed in the substrate between the array and peripheral circuits as electrical isolation. Various techniques are included that increase the field coupling area between the floating gates and a control gate. Other techniques increase the thickness of dielectric between control gates in order to decrease the field coupling between them.
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Image
Fong Yupin K.
Harari Eliyahou
Samachisa George
Yuan Jack H.
Parker John M
Patterson Thuente Christensen Pedersen , P.A.
SanDisk Corporation
Smith Matthew S
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