Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-22
2005-03-22
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S382000, C257S330000
Reexamination Certificate
active
06870232
ABSTRACT:
A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and drain contacts different from the channel material to provide etch selectivity and a T-shaped gate or incorporating a metal for the source and drain contacts and the oxide of the metal for the gate dielectric which is self aligned.
REFERENCES:
patent: 4521446 (1985-06-01), Coleman, Jr. et al.
patent: 5089863 (1992-02-01), Satoh et al.
patent: 5159416 (1992-10-01), Kudoh
patent: 5196357 (1993-03-01), Boardman et al.
patent: 5231038 (1993-07-01), Yamaguchi et al.
patent: 5268330 (1993-12-01), Givens et al.
patent: 5272100 (1993-12-01), Satoh et al.
patent: 5405787 (1995-04-01), Kurimoto
patent: 5418391 (1995-05-01), Huang
patent: 5464782 (1995-11-01), Koh et al.
patent: 5475244 (1995-12-01), Koizumi et al.
patent: 04-180633 (1992-06-01), None
patent: 06-350085 (1994-12-01), None
patent: 205579 (1995-07-01), None
patent: 266313 (1995-12-01), None
Donald A. Neamen, Semicondcutor Physics & Devices Basic Principles, second edition. The McGraw-Hill Companies, Inc., 1992 and 1997. pp 1-3, 16, 17 and 19.*
A. Acovic et al., “Novel Gate Process for 0.1 Micron MOSFETs”, IBM Technical Disclosure Bulletin, vol. 36, No. 11, Nov. 1993.
Handbook of Thin Film Technology, by L.I. Maissel and R. Giang. McGraw-Hill (1970), pp. title, 5-1 to 5-3, 5-16 to 5-21, 19-1 to 19-5 and 19-16 to 19-25.
Chan Kevin Kok
Chu Jack Oon
Ismail Khalid EzzEldin
Rishton Stephen Anthony
Saenger Katherine Lynn
Lee Eddie
Owens Douglas W.
Scully Scott Murphy & Presser
Trepp, Esq. Robert M.
LandOfFree
Scalable MOS field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Scalable MOS field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scalable MOS field effect transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3421464