Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-25
2007-09-25
Malsawma, Lex (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
11435421
ABSTRACT:
A plurality of split gate non-volatile memory cells are formed vertically in a trench along the sidewalls. Each cell is comprised of a bistable element and an adjacent fixed gate threshold element that share a common respective control gate/access gate. The bistable element has a gate insulator stack that is comprised of either a floating gate or a charge trapping layer over a tunnel insulator. A plurality of silicon rich nitride layers are formed over the floating gate or charge trapping layer and separated by a high dielectric constant layer.
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Leffert Jay & Polglaze P.A.
Malsawma Lex
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