Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2011-06-07
2011-06-07
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257SE29100
Reexamination Certificate
active
07956356
ABSTRACT:
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
REFERENCES:
patent: 5413951 (1995-05-01), Ohori et al.
patent: 5506433 (1996-04-01), Ohori et al.
patent: 6019668 (2000-02-01), Ramanath et al.
patent: 6093092 (2000-07-01), Ramanath et al.
patent: 6102789 (2000-08-01), Ramanath et al.
patent: 6346036 (2002-02-01), Halley
patent: 6361647 (2002-03-01), Halley
patent: 6394888 (2002-05-01), Matsumoto et al.
patent: 6685755 (2004-02-01), Ramanath et al.
patent: 6755729 (2004-06-01), Buljan et al.
patent: 6875082 (2005-04-01), Nakayama et al.
patent: 6921719 (2005-07-01), Paterson et al.
patent: 7098152 (2006-08-01), Moore
patent: 7115480 (2006-10-01), Forbes
patent: 7315019 (2008-01-01), Turner et al.
patent: 7439158 (2008-10-01), Forbes et al.
patent: 2002/0052169 (2002-05-01), Vepa et al.
patent: 2002/0151265 (2002-10-01), Adefris
patent: 2003/0097800 (2003-05-01), Ramanath et al.
patent: 2004/0082278 (2004-04-01), Enomoto et al.
patent: 2004/0087146 (2004-05-01), Paterson et al.
patent: 2005/0193942 (2005-09-01), Gorgoni et al.
patent: 2005/0227591 (2005-10-01), Enomoto et al.
patent: 2006/0130767 (2006-06-01), Herchen
patent: 2006/0172663 (2006-08-01), Zhang
patent: 2007/0023395 (2007-02-01), Asakawa
patent: 2008/0075941 (2008-03-01), Tatartchenko et al.
patent: 0221454 (1987-05-01), None
patent: 1577933 (2005-09-01), None
patent: 11-045892 (1999-02-01), None
patent: 2006/031641 (2006-03-01), None
patent: 2006119927 (2006-11-01), None
patent: 2008/083071 (2008-07-01), None
Y. Choi, et al., “Sapphire substrate-transferred nitride-based light-emitting diode fabricated by sapphire wet etching technique,” Solid-State Electronics, vol. 50, pp. 1522-1528, 2006.
Anonymous, “Sappire Wafer,” Semiconductor Wafer, Inc. Product Information, [Online] 2002, SP002493933.
Yuasa T. et al., “Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN,” Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP, vol. 38, No. 7A, Part 02, Jul. 1, 1999, pp. L703-L705, XP000902425.
Someya T. et al., “Misorientation-angle dependence of GaN layers grown on a-plane sapphire substrates by metalorganic chemical vapor deposition,” Applied Physics Letters, AIP, American Institute of Physics, Melfville, NY, vol. 79, No. 13, Sep. 24, 2001, pp. 1992-1994, XP012028969.
Lud D. et al., “Sapphire substrate misorientation effects on GaN nucleation layer properties,” Journal of Crystal Growth, Elsevier, Amsterdam, NL, vol. 272, No. 1-4, Dec. 10, 2004, pp. 353-359, XP004658496.
Grudowski P.A., et al., “The Effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor depositionn,” Applied Physics Letters, AIP, American Institute of Physics, Melville NY, vol. 69, No. 24, Dec. 9, 1996, p. 3626, XP012016766.
Kim et al., “The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin film.”, Phys State Sol, vol. 1, No. 10, pp. 2483-2486, 2004.
Harman et al., “R.F. Sputtered Silicon Films on Sapphire,” Thin Solid Filsm, vol. 32, pp. 55-59, 1976.
Cherian Isaac K.
Chinnakaruppan Palaniappan
Rizzuto Robert A.
Simpson Matthew A.
Tanikella Brahmanandam V.
Abel Law Group, LLP
Saint-Gobain Ceramics & Plastics, Inc.
Zarneke David A
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