Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-04-12
2011-04-12
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S307000, C250S306000, C250S310000, C250S311000, C250S492200
Reexamination Certificate
active
07923703
ABSTRACT:
One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.
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Matsuoka Ryoichi
Morokuma Hidetoshi
Sugiyama Akiyuki
Sutani Takumichi
Toyoda Yasutaka
Hitachi High-Technologies Corporation
McDermott Will & Emery LLP
Wells Nikita
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