Salicide process utilizing a cluster ion implantation process

Details Salicide process utilizing a cluster ion implantation process Salicide process utilizing a cluster ion implantation process

2006-08-08

2009-06-30

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S673000, C438S692000, C438S723000, C438S724000, C257SE21165, C257SE21169, C257SE21315, C257SE21438, C257SE21585

Reexamination Certificate

active

07553763

ABSTRACT:
A salicide process contains providing a silicon substrate that comprises at least a predetermined salicide region, performing a cluster ion implantation process to form an amorphized layer in the predetermined salicide region of the silicon substrate near, forming a metal layer on the surface of the amorphized layer, and reacting the metal layer with the amorphized layer to form a silicide layer on the surface of the silicon substrate.

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