Salicide process for FETs

Details Salicide process for FETs Salicide process for FETs

1997-11-12

1998-11-10

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257388, 257408, 257900, 257213, H01L 2701

Patent

active

058348115

ABSTRACT:
In this structure, the lightly doped layers that form the upper portions of the source and drain regions extend inwards towards the gate region, thereby satisfying the design requirements of low area and high resistivity at the interface, but not outwards towards the poly/silicide conductors that make connection to the source and drain areas.

REFERENCES:
patent: 5053349 (1991-10-01), Matsuoka
patent: 5162349 (1992-11-01), Beriger et al.
patent: 5278098 (1994-01-01), Wei et al.

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