Salicide process

Details Salicide process Salicide process

1999-08-17

2000-05-30

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438586, 438596, 438655, H01L 21336

Patent

active

060690321

ABSTRACT:
A salicide process is described. The edge of a gate are etched to form a reversed T-shaped gate that is then self-aligned by a silicide film. This etching step can be performed by using a silicon oxynitride layer as an etching mask over the gate.

REFERENCES:
patent: 5726479 (1998-03-01), Matsumoto et al.
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5766969 (1998-06-01), Fulford, Jr. et al.
patent: 6011290 (2000-01-01), Gardner et al.

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