Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-01
2006-08-01
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S157000, C438S268000, C257S329000, C257S347000, C257S623000
Reexamination Certificate
active
07084018
ABSTRACT:
A method of reducing buried oxide undercut during FinFET formation includes forming a fin on a buried oxide layer and forming a source region adjacent a first end of the fin and a drain region adjacent a second end of the fin. The method further includes forming a sacrificial oxide layer over the fin and source and drain regions and forming a gate over the fin, wherein the sacrificial oxide layer reduces undercutting of the buried oxide layer during gate formation.
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Ahmed Shibly S.
Yu Bin
Advanced Micro Devices , Inc.
Fulk Steven J.
Smith Bradley K.
Snyder, LLP Harrity
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