Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-19
2011-07-19
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C257SE21210, C257SE21309, C257SE21421, C257SE21431
Reexamination Certificate
active
07981745
ABSTRACT:
Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.
REFERENCES:
patent: 6037627 (2000-03-01), Kitamura et al.
patent: 6335554 (2002-01-01), Yoshikawa
patent: 6639271 (2003-10-01), Zheng et al.
patent: 6867101 (2005-03-01), Yu
patent: 7521317 (2009-04-01), Li et al.
patent: 2005/0037577 (2005-02-01), Kim et al.
patent: 2005/0148142 (2005-07-01), Cabral et al.
patent: 2005/0255657 (2005-11-01), Kim
patent: 2005/0272198 (2005-12-01), Hamamura et al.
patent: 2006/0001075 (2006-01-01), Shih
patent: 2007/0048936 (2007-03-01), Kim et al.
patent: 2007/0048957 (2007-03-01), Lee et al.
patent: 08288412 (1996-11-01), None
International Search Report for International Application No. PCT/US2008/074291 dated Feb. 13, 2009.
Written Opinion of the International Searching Authority for PCT/US2008/074291 dated Feb. 13, 2009.
Partial International Search Report for PCT/US2008/074291 dated Oct. 7, 2008.
Chang Kuo-Tung
Cheung Fred
Kinoshita Hiroyuki
Lee Chung-ho
Wu Huaqiang
Jones Eric W
Le Thao X
Spansion LLC
Turocy & Watson LLP
LandOfFree
Sacrificial nitride and gate replacement does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sacrificial nitride and gate replacement, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sacrificial nitride and gate replacement will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2697238