Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-30
2007-10-30
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S617000, C438S618000, C438S622000, C438S624000, C438S625000, C438S629000, C438S666000, C438S668000, C438S672000, C438S700000, C257SE21575
Reexamination Certificate
active
11558959
ABSTRACT:
The present invention provides a method of forming a rigid interconnect structure, and the device therefrom, including the steps of providing a lower metal wiring layer having first metal lines positioned within a lower low-k dielectric; depositing an upper low-k dielectric atop the lower metal wiring layer; etching at least one portion of the upper low-k dielectric to provide at least one via to the first metal lines; forming rigid dielectric sidewall spacers in at least one via of the upper low-k dielectric; and forming second metal lines in at least one portion of the upper low-k dielectric. The rigid dielectric sidewall spacers may comprise of SiCH, SiC, SiNH, SiN, or SiO2. Alternatively, the via region of the interconnect structure may be strengthened with a mechanically rigid dielectric comprising SiO2, SiCOH, or doped silicate glass.
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Gambino Jeffrey P.
Stamper Anthony K.
Ahmadi Mohsen
Lebentritt Michael
Sabo, Esq. William D.
Scully , Scott, Murphy & Presser, P.C.
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