Rugged stacked oxide layer structure and method of fabricating s

Details Rugged stacked oxide layer structure and method of fabricating s Rugged stacked oxide layer structure and method of fabricating s

1996-08-27

1998-12-22

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438763, 438790, H01L 218234, H01L 2131

Patent

active

058518673

ABSTRACT:
The present invention relates to a rugged stacked oxide layer structure which remarkably increases an area of a subsequent deposition layer over the rugged stacked oxide layer. The enlargement of the area of a deposition layer over the rugged oxide layer enables one to ameliorate an electrical characteristic of a device and provide a higher integration density. For example, the rugged stacked oxide layer can be used to provide a higher capacitance by enlarging the area of a storage electrode of a capacitor. Similarly it can also be used to increase light absorption of a photodetector per unit area by enlarging an interfacial area of a P-N junction of the photodetector.

REFERENCES:
patent: 4818337 (1989-04-01), Barnett
patent: 5049517 (1991-09-01), Liu
patent: 5484749 (1996-01-01), Maeda
patent: 5503882 (1996-04-01), Dawson
patent: 5545585 (1996-08-01), Wang

Affiliated with

Also associated with

Rating

Rugged stacked oxide layer structure and method of fabricating s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Rugged stacked oxide layer structure and method of fabricating s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rugged stacked oxide layer structure and method of fabricating s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2046813