Rugged metal electrodes for metal-insulator-metal capacitors

Details Rugged metal electrodes for metal-insulator-metal capacitors Rugged metal electrodes for metal-insulator-metal capacitors

2006-09-12

2006-09-12

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S398000, C438S396000

Reexamination Certificate

active

07105405

ABSTRACT:
Thin film metal-insulator-metal capacitors having enhanced surface area are formed by a substituting metal for silicon in a preformed electrode geometry. The resulting metal structures are advantageous for high-density DRAM applications since they have good conductivity, enhanced surface area and are compatible with capacitor dielectric materials having high dielectric constant.

REFERENCES:
patent: 5043780 (1991-08-01), Fazan et al.
patent: 5068199 (1991-11-01), Sandhu
patent: 5102832 (1992-04-01), Tuttle
patent: 5110752 (1992-05-01), Lu
patent: 5112773 (1992-05-01), Tuttle
patent: 5130885 (1992-07-01), Fazan et al.
patent: 5138411 (1992-08-01), Sandhu
patent: 5182232 (1993-01-01), Chhabra
patent: 5191509 (1993-03-01), Wen
patent: 5245206 (1993-09-01), Chu et al.
patent: 5318920 (1994-06-01), Hayashide
patent: 5320880 (1994-06-01), Sandhu et al.
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5366919 (1994-11-01), Tanaka et al.
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5384152 (1995-01-01), Chu et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5407534 (1995-04-01), Thakur
patent: 5413950 (1995-05-01), Chen et al.
patent: 5418180 (1995-05-01), Brown
patent: 5474949 (1995-12-01), Hirao
patent: 5486488 (1996-01-01), Kamiyama
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5563090 (1996-10-01), Lee et al.
patent: 5569614 (1996-10-01), Kataoka et al.
patent: 5587614 (1996-12-01), Hwang et al.
patent: 5608247 (1997-03-01), Brown
patent: 5622888 (1997-04-01), Sekine et al.
patent: 5760434 (1998-06-01), Zahurak et al.
patent: 5770500 (1998-06-01), Batra et al.
patent: 5801104 (1998-09-01), Schuegraf et al.
patent: 5856237 (1999-01-01), Ku
patent: 5861675 (1999-01-01), Sasaki et al.
patent: 5872033 (1999-02-01), Figura
patent: 5885882 (1999-03-01), Schugraf et al.
patent: 6015986 (2000-01-01), Schuegraf
patent: 6060355 (2000-05-01), Batra et al.
patent: 6090655 (2000-07-01), Zahurak et al.
patent: 6107227 (2000-08-01), Jacquin et al.
patent: 6197634 (2001-03-01), Schugraf et al.
patent: 6509280 (2003-01-01), Choi
patent: 6964901 (2005-11-01), Pontoh et al.
patent: 403136361 (1991-06-01), None
Watanabe et al., “Hemispherical Grained Si Formation on in -situ Phosphorus Doped Amorphous-Si Electrode for 256Mb DRAM's Capacitor”, IEEE Transactions on Electron Devices, vol. 42, No. 7, pp. 1247-1253, Jul. 1995.
Watanabe et al., “An Advanced technique for Fabricating Hemispherical-Grained(HSG)Silicon Storage Electrodes”, IEEE Transactions on Electron Devices, vol. 42, No. 2, pp. 295-300, Feb. 1995.
Sakai et al., “Novel Seeding Method for the Growth of Polycrystalline Si Films with Hemispherical Grains”, Applied Physics Letters, vol. 6, No. 2, pp. 159-161, Jul. 13, 1992.
Kago et al., “A 0.29μm2MIM CROWN Cell and Process Technologies for 1-Gigabit DRAMs”, IEDM, 1194, pp. 927-929.

Affiliated with

Also associated with

Rating

Rugged metal electrodes for metal-insulator-metal capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Rugged metal electrodes for metal-insulator-metal capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rugged metal electrodes for metal-insulator-metal capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3550571