Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2005-02-01
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S044000, C257S192000, C257S310000, C360S324000, C360S326000
Reexamination Certificate
active
06849891
ABSTRACT:
A RRAM memory cell is formed on a silicon substrate having a operative junction therein and a metal plug formed thereon, includes a first oxidation resistive layer; a first refractory metal layer; a CMR layer; a second refractory metal layer; and a second oxidation resistive layer. A method of fabricating a multi-layer electrode RRAM memory cell includes preparing a silicon substrate; forming a junction in the substrate taken from the group of junctions consisting of N+ junctions and P+ junctions; depositing a metal plug on the junction; depositing a first oxidation resistant layer on the metal plug; depositing a first refractory metal layer on the first oxidation resistant layer; depositing a CMR layer on the first refractory metal layer; depositing a second refractory metal layer on the CMR layer; depositing a second oxidation resistant layer on the second refractory metal layer; and completing the RRAM memory cell.
REFERENCES:
patent: 5504041 (1996-04-01), Summerfelt
patent: 6723643 (2004-04-01), Pan et al.
Liu et al.,Electrical-pulse-induced reversible resistance change effect in magnetoresistive filmsApplied Physics Letters. vol. 76, #19, p. 2749-2751; May, 2000.
Hsu Sheng Teng
Li Tingkai
Pan Wei
Zhang Fengyan
Zhuang Wei-Wei
Curtin Joseph P.
Flynn Nathan J.
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
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