Row redundancy memory repair scheme with shift to eliminate...

Details Row redundancy memory repair scheme with shift to eliminate... Row redundancy memory repair scheme with shift to eliminate...

2005-03-22

2005-03-22

Ho, Hoai (Department: 2818)

Static information storage and retrieval

Read/write circuit

Testing

C365S200000, C365S189020, C365S225700

Reexamination Certificate

active

06870782

ABSTRACT:
A memory having built-in self repair with row shifting is provided. The rows in the memory are divided into smaller row groups and a bad row group is repaired with a redundant row group. Each row group receives a row select signal, which is fed into a shift circuit for the row group and a shift circuit for an adjacent row group. A shift circuit is provided for the redundant row group and the shift circuit for the redundant row group receives the row select signal for only the adjacent row group. If a bad row group is detected, then starting with the row group furthest from the redundant row group, the shift circuit for each row group before the bad row group is deactivated. The row group select signal and word line signal for the bad row group are disabled. The shift circuit for the bad row group and the shift circuit for each row group after the bad row group are activated. Therefore, the bad row group is disabled and the redundant row group fills the void.

REFERENCES:
patent: 5255227 (1993-10-01), Haeffele
patent: 5764577 (1998-06-01), Johnston et al.
patent: 6141269 (2000-10-01), Shiomi et al.
patent: 6567323 (2003-05-01), Pitts et al.
patent: 20040105289 (2004-06-01), Roth et al.

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