Porous, film, wiring structure, and method of forming the same

Details Porous, film, wiring structure, and method of forming the same Porous, film, wiring structure, and method of forming the same

2005-03-29

2005-03-29

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S761000, C257S762000, C257S763000, C257S764000, C257S765000, C438S637000, C438S672000

Reexamination Certificate

active

06873052

ABSTRACT:
An organic-inorganic hybrid film is deposited on a substrate by introducing, into a vacuum chamber, a gas mixture of a silicon alkoxide and an organic compound and generating a plasma derived from the gas mixture. Then, a hydrogen plasma process is performed with respect to the organic-inorganic hybrid film by introducing, into the vacuum chamber, a gas containing a reducing gas and generating a plasma derived from the gas. As a result, an organic component in the organic-inorganic hybrid film eliminates therefrom and numerous fine holes are formed in hollow portions from which the organic component has eliminated, whereby a porous film composed of the organic-inorganic hybrid film is obtained.

REFERENCES:
patent: 5965202 (1999-10-01), Taylor-Smith et al.
patent: 6127258 (2000-10-01), Watanabe
patent: 6197696 (2001-03-01), Aoi
patent: 6387824 (2002-05-01), Aoi
patent: 6399177 (2002-06-01), Fonash et al.

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