Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – With textured surface
Reexamination Certificate
2006-03-21
2006-03-21
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
With textured surface
C257S784000, C257S786000
Reexamination Certificate
active
07015580
ABSTRACT:
An intermediate semiconductor structure and method for low-pressure wire bonding that reduces the propensity of dielectric material to mechanical failure due to any wire bonding stresses. Roughened surfaces such as metal pillars or metal dendrites are provided on a bonding pad, bonding wire or both. These roughened surfaces increase reactivity between the bond wire and the bond pad to form strong bonds. This increased activity as a result of the roughened bonding pad and/or wire surfaces reduce the amount of pressure, temperature and energy required for wire bonding, which in turn, avoids damage to the bonding pad as well as the semiconductor substrate.
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Fitzsimmons John A.
Gambino Jeffrey P.
Walton Erick G.
Coleman W. David
DeLio & Peterson LLC
International Business Machines - Corporation
Jaklitsch Lisa U.
Nguyen Khiem
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