Room temperature wet chemical growth process of SiO based oxides

Details Room temperature wet chemical growth process of SiO based oxides Room temperature wet chemical growth process of SiO based oxides

1999-03-22

2000-06-27

Niebling, John F.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438769, 438787, 438789, 438790, 4274432, 427435, H01L 2131

Patent

active

060806834

ABSTRACT:
Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process includes soaking the Si substrates into the growth solution. The process utilizes a mixture of H.sub.2 SiF.sub.6, N-n-butylpyridinium chloride, redox Fe.sup.2+ /Fe.sup.3+ aqueous solutions, and a homogeneous catalyst.

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