Room temperature-operating single-electron device and the...

Details Room temperature-operating single-electron device and the... Room temperature-operating single-electron device and the...

2011-07-19

2011-07-19

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S680000, C438S712000, C257SE21170, C257SE21320, C257SE21218, C257SE21278, C257SE21347

Reexamination Certificate

active

07981799

ABSTRACT:
The present invention relates to a room temperature-operating single-electron device and a fabrication method thereof, and more particularly, to a room temperature-operating single-electron device in which a plurality of metal silicide dots formed serially is used as multiple quantum dots, and a fabrication method thereof.

REFERENCES:
patent: 7268407 (2007-09-01), Jang et al.
patent: 2010/0006921 (2010-01-01), Makihara et al.
patent: 2010/0155808 (2010-06-01), Makihara et al.
patent: 2000-243936 (2000-09-01), None
patent: 10-2003-0043513 (2003-06-01), None

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