ROM device using a schuckly diode

Details ROM device using a schuckly diode ROM device using a schuckly diode

1997-08-05

1998-12-29

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438282, H01L 218234

Patent

active

058541110

ABSTRACT:
A ROM device using a Shockly diode uses the Shockly diode as a memory cell in the ROM device. In the present invention, the current of the memory cell is larger than that of a convention one. In the conventional ROM device, the code is programmed by making use of the channel transistor as the memory cell and implanting. In the present invention, the code is programmed by defining contact windows of the ROM device to prevent the ROM device from the shortcomings of limited current. In addition, the memory cells of the ROM device of a Shockly diode are isolated by an insulating layer, resulting in a smaller area for the device and improved integrity.

REFERENCES:
patent: 4694566 (1987-09-01), Conner et al.
patent: 5378647 (1995-01-01), Hong
patent: 5504025 (1996-04-01), Fong-Chun et al.

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