ROM device structure comprised of ROM memory array cells, featur

Details ROM device structure comprised of ROM memory array cells, featur ROM device structure comprised of ROM memory array cells, featur

1997-03-24

1999-11-23

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257331, 257345, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059905255

ABSTRACT:
A ROM device structure, featuring a ROM memory cell, with the ROM memory cell exhibiting a concave shaped, channel region, has been developed. The ROM device structure is comprised of heavily doped, N type, bit line regions, located in flat regions of the ROM device structure, while lightly doped, P type regions. comprise the concave channel region for the ROM memory cell. The ROM device structure offers self-alignment of the P type, concave channel regions, to the heavily doped N type, bit line regions.

REFERENCES:
patent: 5214303 (1993-05-01), Aoki
patent: 5300804 (1994-04-01), Arai
patent: 5448094 (1995-09-01), Hsu
patent: 5498556 (1996-03-01), Hong et al.
patent: 5654576 (1997-08-01), Hsue et al.

Affiliated with

Also associated with

Rating

ROM device structure comprised of ROM memory array cells, featur does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with ROM device structure comprised of ROM memory array cells, featur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ROM device structure comprised of ROM memory array cells, featur will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1224697