Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-07-08
2000-12-12
Smith, Matthew
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438627, 438643, 438675, H01L 2144
Patent
active
061598577
ABSTRACT:
A method is provided for cleaning exposed copper surfaces in damascene structures after chemical mechanical polishing of the copper. In a first embodiment exposed copper is annealed in a forming gas environment, a mixture of hydrogen and nitrogen, after chemical mechanical polishing, or other etching means, is used to remove the copper down to the top of the trench dielectric. A layer of silicon nitride, SiN, is then immediately deposited, preferably in situ, over the exposed copper. In a second embodiment exposed copper is subjected to a plasma of NH.sub.3 after chemical mechanical polishing, or other etching means, is used to remove the copper down to the top of the trench dielectric. A layer of silicon nitride, SiN, is then immediately deposited in situ over the exposed copper. A layer of dielectric can then be deposited on the layer of silicon nitride and processing can be continued without contaminating or oxidizing the copper.
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Liu Chung-Shi
Yu Chen-Hua
Ackerman Stephen B.
Anya Igwe U.
Prescott Larry J.
Saile George O.
Smith Matthew
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