Robust end-point detection for contact and via etching

Details Robust end-point detection for contact and via etching Robust end-point detection for contact and via etching

1996-02-26

1998-05-05

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438926, H01L 2144

Patent

active

057473803

ABSTRACT:
A method for improving the end-point detection for contact and via etching is disclosed. The disclosure describes the deliberate addition of dummy patterns in the form of contact and via holes to the regular functional holes in order to increase the amount of etchable surface area. It is shown that, one can then take advantage of the marked change in the composition of the etchant gas species that occurs as soon as what was once a large exposed area has now been consumed through the etching process. This then gives a strong and robust signal for the end of the etching process. This in turn results in better controlled and more reliable product. It is also indicated that with the full uniform pattern of the via layers now possible, the chemical/mechanical polishing process becomes much less pattern sensitive.

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