RF pulsing of a narrow gap capacitively coupled reactor

Details RF pulsing of a narrow gap capacitively coupled reactor RF pulsing of a narrow gap capacitively coupled reactor

2011-07-12

2011-07-12

Kackar, Ram N (Department: 1716)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

Reexamination Certificate

active

07976673

ABSTRACT:
An apparatus for providing a plasma etch of a layer over a wafer is provided. A capacitively coupled process chamber is provided. A gas source is provided. A first and a second electrode are provided within the process chamber. A first radio frequency power source is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source is electrically connected to at least one of the first and second electrodes. A first modulation control is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.

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