Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-15
2000-05-16
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257383, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119
Patent
active
06064088&
ABSTRACT:
A semiconductor MOSFET device having a decreased length of the channel region is disclosed. In one embodiment of the device, each gate includes three gate subregions. An enhancement drift drain region underlies the first gate subregion, a channel region underlies the third gate subregion, and each enhancement drift drain region and each channel region are separated by an epitaxial region underlying the second gate subregion. The device of the present invention if used as an amplifier, has a more linear transfer characteristic, less cross talk and less channel interference than a conventional semiconductor MOSFET device having a conventional gate region without gate subregions.
REFERENCES:
patent: 5155563 (1992-10-01), Davies et al.
patent: 5900663 (1999-05-01), Johnson et al.
Clark Sheila V.
Tankhilevich Boris G.
Xemod, Inc.
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