RF nanoswitch

Details RF nanoswitch RF nanoswitch

2009-11-16

2010-10-19

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S109000, C257S415000, C257SE51040, C977S708000, C200S181000, C333S262000

Reexamination Certificate

active

07816662

ABSTRACT:
An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.

REFERENCES:
patent: 6997039 (2006-02-01), Rao et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2005/0280436 (2005-12-01), Bertin
patent: 2006/0091983 (2006-05-01), Robert

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