Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – Having glow discharge electrode gas energizing means
Reexamination Certificate
2008-07-01
2008-07-01
Hassanzadeh, Parviz (Department: 1792)
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
Having glow discharge electrode gas energizing means
C118S7230ER
Reexamination Certificate
active
07393432
ABSTRACT:
An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.
REFERENCES:
patent: 5877471 (1999-03-01), Huhn et al.
patent: 5897389 (1999-04-01), Dietz et al.
patent: 6202589 (2001-03-01), Grahn et al.
patent: 6779481 (2004-08-01), Kent et al.
“International Search Report,” mailed Dec. 6, 2007, for Application No. PCT/US05/34073; Filed on Sep. 23, 2005; Applicants Lam Research Corporation.
“Written Opinion,” mailed Dec. 6, 2007, for Application No. PCT/US05/34073; Filed on Sep. 23, 2005; Applicants: Lam Research Corporation.
“International Preliminary Report,” mailed Jan. 31, 2008, for Application No. PCT/US05/34073; Filed Sep. 23, 2005; Applicants: Lam Research Corporation.
Dhindsa Rajinder
Kozakevich Felix
Lenz Eric
Martin Russell
Arancibia Maureen G
Hassanzadeh Parviz
IP Strategy Group, P.C.
Lam Research Corporation
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