Reverse CMOS method for dual isolation semiconductor device

Details Reverse CMOS method for dual isolation semiconductor device Reverse CMOS method for dual isolation semiconductor device

1997-06-30

1999-02-23

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438221, 438224, 438225, 438233, 438296, 438430, 438621, 438638, 438648, 438656, H01L 218238

Patent

active

058743286

ABSTRACT:
CMOS transistors are formed by a damascene process resulting in field oxide regions exhibiting essentially no bird's beak portions. A trench isolation is also formed in a source/drain region each transistor between adjacent junctions.

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patent: 5015594 (1991-05-01), Chu et al.
patent: 5055423 (1991-10-01), Smith et al.
patent: 5573969 (1996-11-01), Kim

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