Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2009-06-09
2011-11-15
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S787000, C438S758000, C438S781000, C438S478000
Reexamination Certificate
active
08058183
ABSTRACT:
A method for restoring the dielectric constant of a low dielectric constant film is described. A porous dielectric layer having a plurality of pores is formed on a substrate. The plurality of pores is then filled with an additive to provide a plugged porous dielectric layer. Finally, the additive is removed from the plurality of pores.
REFERENCES:
patent: 6703324 (2004-03-01), Wong
patent: 7094681 (2006-08-01), Fujita et al.
Cui Zhenjiang
Demos Alexandros T.
Naik Mehul
Yu May
Applied Materials Inc.
Blakely , Sokoloff, Taylor & Zafman LLP
Luu Chuong A.
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