Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-02-26
1999-03-16
Raimund, Christopher
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419237, 438655, 438656, 438978, C23C 1400
Patent
active
058824880
ABSTRACT:
An improved apparatus and method for manufacturing semiconductor devices, and, in particular, for depositing material at the bottom of a contact hole, comprises sputtering a material onto a semiconductor substrate; applying a first bias voltage to the substrate, simultaneously removing the material surrounding the contact hole to form a facet at the top of the recess; and applying a second bias voltage to the substrate, simultaneously sputter-depositing the first material onto the bottom of the recess. A further embodiment of the invention utilizes an electrically isolated collimator for the sputtering apparatus. Another embodiment of the invention resputters a first material onto sidewalls of a contact hole during physical vapor deposition.
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Micro)n Technology, Inc.
Raimund Christopher
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