Resolving of fluorine loading effect in the vacuum chamber

Details Resolving of fluorine loading effect in the vacuum chamber Resolving of fluorine loading effect in the vacuum chamber

2006-07-26

2008-10-14

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21278, C257SE21546, C257SE21547, C438S788000

Reexamination Certificate

active

07435684

ABSTRACT:
This invention relates to electronic device fabrication processes for making devices such as semiconductor wafers and resolves the fluorine loading effect in the reaction chamber of a HDP CVD apparatus used for forming dielectric layers in high aspect ratio, narrow width recessed features. The fluorine loading effect in the chamber is minimized and wafers are provided having less deposition thickness variations by employing the method using a hydrogen plasma treatment of the chamber and the substrate after the chamber has been used to grow a dielectric film on a substrate. After the hydrogen plasma treatment of the chamber, the chamber is treated with an etchant gas to etch the substrate. Preferably a hydrogen gas is then introduced into the chamber after the etching process and the process repeated until the fabrication process is complete. The wafer is then removed from the chamber and a new wafer placed in the chamber and the above fabrication process repeated.

REFERENCES:
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patent: 2007/0072422 (2007-03-01), Yeh

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