Resistless lithography method for fabricating fine structures

Details Resistless lithography method for fabricating fine structures Resistless lithography method for fabricating fine structures

2008-01-15

2008-01-15

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

C430S302000, C430S314000, C430S323000, C430S324000, C438S551000

Reexamination Certificate

active

07318993

ABSTRACT:
A resistless lithography method for fabricating fine stiuctures is disclosed. IN an embodiment, a semiconductor mask layer (HM) may be formed on a carrier material (TM, HM′) and a selective ion implantation (I) being effected in order to dope selected regions (1) of the semiconductor mask layer (HM). Wet chemical removal of the non doped regions of the semiconductor mask layer (HM) yields a semiconductor mask which can be used for further patterning. A simple and high precision resistless lithography method for structures smaller than 100 nm is obtained in this way.

REFERENCES:
patent: 4450041 (1984-05-01), Aklufi
patent: 4897361 (1990-01-01), Harriott et al.
patent: 4999083 (1991-03-01), Watanabe et al.
patent: 5106764 (1992-04-01), Harriott et al.
patent: 5918143 (1999-06-01), Beauvais et al.
patent: 6074930 (2000-06-01), Cho et al.
patent: 6177331 (2001-01-01), Koga
patent: 6475919 (2002-11-01), Brencher et al.
patent: 100 00 003 (2001-07-01), None
patent: 0 321 144 (1989-06-01), None
patent: 0 363 099 (1990-04-01), None
patent: 0 932 187 (1999-07-01), None
patent: 51-019974 (1976-02-01), None
patent: 56-116626 (1981-09-01), None
patent: 63051641 (1988-03-01), None
patent: 63281488 (1988-11-01), None
patent: 02-002102 (1990-01-01), None
patent: 02034922 (1990-02-01), None
patent: 02-191326 (1990-07-01), None
patent: 7-162046 (1995-06-01), None
patent: 08-250403 (1996-09-01), None
patent: 10-335444 (1998-12-01), None
patent: 11-204633 (1999-07-01), None
Brugger, J. et al., “Silicon Micro/Nanomechanical Device Fabrication Based on Focused Ion Beam Surface Modification and KOH Etching”,Microelectronic Engineering, 35 (1997) pp. 401-404.
Rennon, S. et al., “Nanoscale Patterning By Focused Ion Beam Enhanced Etching For Optoelectronic Device Fabrication”,Microlectronic Engineering57-58 (2001) pp. 891-896.
Rensch, David B. et al., Submicrometer FET gate fabrication using resistless and focused ion beam techniques; 8257BJournal of Vacuum Science&Technology/B 3 (1985) Jan.-Feb., No. 1 Second Series, Woodbury, NY, USA.
Wolf, Ph.D., Stanley et al., “Silicon Processing For The VLSI Era, vol. 1: Process Technology”;Lattice Press, Sunset Beach, California.
International Search Report for Patent Cooperation Treaty application No. PCT/DE02/04524, dated Nov. 1, 3003, 4 pages.

Affiliated with

Also associated with

Rating

Resistless lithography method for fabricating fine structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistless lithography method for fabricating fine structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistless lithography method for fabricating fine structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2760149