Resistively switching memory

Details Resistively switching memory Resistively switching memory

2005-04-25

2008-10-28

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S130000, C438S382000, C257S154000

Reexamination Certificate

active

07442605

ABSTRACT:
The present invention relates to a reproducible conditioning during the manufacturing of a resistively switching CBRAM memory cell comprising a first electrode and a second electrode with an active material positioned therebetween. The active material is adapted to be placed in a more or less electroconductive state by means of electrochemical switching processes. A CBRAM memory cell manufactured pursuant to the method according to the invention has, due to the improved conditioning, more reliable and more distinctly evaluable electrical switching properties. Moreover, no more forming step is necessary with the method according to the present invention.

REFERENCES:
patent: 6635914 (2003-10-01), Kozicki et al.
patent: 6709958 (2004-03-01), Li et al.
patent: 6813176 (2004-11-01), Gilton et al.
patent: 6818481 (2004-11-01), Moore et al.
patent: 7087919 (2006-08-01), Campbell et al.
patent: 2003/0052330 (2003-03-01), Klein
patent: 2004/0076051 (2004-04-01), Klein
M. N. Kozicki et al, (2000) “Nanoscale Effects in Devices Based on Chalcogenide Solid Solutions,” Superlattices and Microstructures 27(5/6), pp. 485-488.

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