Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-11-09
2009-11-17
Purvis, Sue (Department: 2826)
Static information storage and retrieval
Systems using particular element
Resistive
C257S004000, C257SE29323
Reexamination Certificate
active
07619915
ABSTRACT:
Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a metal compound, the metal compound including metal with no more than a divalence and a metal compound having anions, a solid electrolyte layer formed on the first electrode, and a second electrode formed on the solid electrolyte layer.
REFERENCES:
patent: 2006/0054950 (2006-03-01), Baek et al.
patent: 2006/0175598 (2006-08-01), Krieger et al.
Bae Hyung-jin
Choi Sang-jun
Lee Jung-hyun
Harness & Dickey & Pierce P.L.C.
Purvis Sue
Samsung Electronics Co,. Ltd.
Stowe Scott
LandOfFree
Resistive random access memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resistive random access memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistive random access memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4090232