Resistive random access memory device

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Details

C257S004000, C257SE29323

Reexamination Certificate

active

07619915

ABSTRACT:
Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a metal compound, the metal compound including metal with no more than a divalence and a metal compound having anions, a solid electrolyte layer formed on the first electrode, and a second electrode formed on the solid electrolyte layer.

REFERENCES:
patent: 2006/0054950 (2006-03-01), Baek et al.
patent: 2006/0175598 (2006-08-01), Krieger et al.

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