Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-09-26
2009-02-24
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S148000, C365S063000, C365S205000
Reexamination Certificate
active
07495984
ABSTRACT:
A Resistance based Random Access Memory (ReRAM) can include a current reference circuit including at least three ReRAM reference cells coupled in parallel with one another and configured to provide a reference current to respective ReRAM sense amplifier circuits.
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Baek In-Gyu
Jeong Jun-Ho
Kim Hyun-Jo
Lee Jang-Eun
Nam Kyung-Tae
Myers Bigel Sibley & Sajovec P.A.
Nguyen Tuan T.
Samsung Electronics Co,. Ltd.
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