Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-05-10
2011-05-10
Mai, Son L (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S100000, C365S163000
Reexamination Certificate
active
07940547
ABSTRACT:
Example embodiments provide a method for programming a resistive memory device that includes a resistance conversion layer. The method may include applying multiple pulses to the resistance conversion layer. The multiple pulses may include at least two pulses, where a magnitude of each pulse of the at least two pulses is the same. A first pulse of the at least two pulses may be applied on one side of the resistance conversion layer and a second pulse of the at least two pulses may be applied on the other side of the resistance conversion layer. The applying step may be performed during a set programming operation or a reset programming operation. A resistive memory device for programming a resistance conversion layer may include a first and second electrode, a lower structure, and the resistance conversion layer coupled between the first and second electrodes. The resistance conversion layer may be configured to receive multiple pulses, where the multiple pulses include at least two pulses having the same magnitude.
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Lee Myung-jae
Lee Seung-Hoon
Park Yoon-dong
Park Young-soo
Harness & Dickey & Pierce P.L.C.
Mai Son L
Samsung Electronics Co,. Ltd.
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